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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

Name: Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench Fieldstop
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : FF50R12RT4

Place of Origin : China

MOQ : 1 set

Payment Terms : T/T

Supply Ability : 1000sets

Delivery Time : 25 days after signing the contract

Packaging Details : Wooden box packing

VCES : 1200V

IC nom : 50A

ICRM : 100A

Applications : Motor Drives

Electrical Features : Low Switching Losses

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Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Tvj op = 150°C

• VCEsat with positive Temperature Coefficient

Mechanical Features

• Isolated Base Plate

• Standard Housing

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 100°C, Tvj max = 175°C	IC nom	50	A
Repetitive peak collector current	tP = 1 ms	ICRM	100	A
Total power dissipation	TC = 25°C, Tvj max = 175°C	Ptot	285	W
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values

Collector-emitter saturation voltage	IC = 50 A, VGE = 15 V Tvj = 25°C IC = 50 A, VGE = 15 V Tvj = 125°C IC = 50 A, VGE = 15 V Tvj = 150°C	VCE sat		1,85 2,15 2,25	2,15	V VV
Gate threshold voltage	IC = 1,60 mA, VCE = VGE, Tvj = 25°C	VGEth	5,2	5,8	6,4	V
Gate charge	VGE = -15 V ... +15 V	QG		0,38		µC
Internal gate resistor	Tvj = 25°C	RGint		4,0		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		0,10		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			1.0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			100	nA
Turn-on delay time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C	td on		0,13 0,15 0,15		µs µs µs
Rise time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C	tr		0,02 0,03 0,035		µs µs µs
Turn-off delay time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	td off		0,30 0,38 0,40		µs µs µs
Fall time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	tf		0,045 0,08 0,09		µs µs µs
Turn-on energy loss per pulse	IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 15 Ω Tvj = 150°C	Eon		4,50 6,50 7,50		19,0 30,0 36,0
Turn-off energy loss per pulse	IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	Eoff		2,50 4,00 4,50		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C	ISC		180		mJ mJ mJ
Thermal resistance, junction to case	IGBT / per IGBT	RthJC			0,53	K/W
Thermal resistance, caseto heatsink	EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)	RthCH		0,082		K/W
Temperature under switching conditions		Tvj op	-40		150	°C

Product Tags:

high power igbt module

automotive igbt

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