| Collector-emitter saturation voltage | IC = 1200 A, VGE = 15 V Tvj = 25°C IC = 1200 A, VGE = 15 V Tvj = 125°C IC = 1200 A, VGE = 15 V Tvj = 175°C | VCE sat | | 1,70 2,00 2,15 | 2,15 2,45 2,60 | VVV |
| Gate threshold voltage | IC = 33,0 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,25 | 5,80 | 6,35 | V |
| Gate charge | VGE = -15 V ... +15 V, VCE = 600V | QG | | 5,75 | | µC |
| Internal gate resistor | Tvj = 25°C | RGint | | 0,75 | | Ω |
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | | 65,5 | | nF |
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | | 2,60 | | nF |
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | | | 5,0 | mA |
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | | | 400 | nA |
| Turn-on delay time, inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C | td on | | 0,20
0,23
0,25 | | µs
µs
µs |
| Rise time,inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C | tr | | 0,16
0,17
0,18 | | µs
µs
µs |
| Turn-off delay time, inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C | td off | | 0,48
0,52
0,55 | | µs
µs
µs |
| Fall time,inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C | tf | | 0,08
0,11
0,13 | | µs
µs
µs |
| Turn-on energy loss per pulse | IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C | Eon | | 80,0
120
160 | | mJ
mJ
mJ |
| Turn-off energy loss per pulse | IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C | Eoff | | 130
160
180 | | mJ
mJ
mJ |
| SC data | VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C | ISC | | 4000 | | A |
| Thermal resistance, junction to case | IGBT/per IGBT | RthJC | | | 28,7 | K/kW |
| Thermal resistance,case to heat sink | IGBT/per IGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) | RthCH | | 22,1 | | K/kW |
| Temperature under switching conditions | | Tvj op | -40 | | 175 | °C |
